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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

Published online by Cambridge University Press:  03 September 2012

Monica Hansen
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
Paul Fini
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
Lijie Zhao
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
Amber Abare
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
Larry A. Coldren
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
James S. Speck
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
Steven P. DenBaars
Affiliation:
Materials Department and Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, California 93106
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Abstract

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
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