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Implementation of a low temperature wafer bonding process for acceleration sensors

Published online by Cambridge University Press:  21 March 2011

Maik Wiemer
Affiliation:
Fraunhofer Institute Reliability and Microintegration, Department Micro Devices and Equipment, Reichenhainer Strasse 88, 09126 Chemnitz, Germany
Thomas Otto
Affiliation:
Fraunhofer Institute Reliability and Microintegration, Department Micro Devices and Equipment, Reichenhainer Strasse 88, 09126 Chemnitz, Germany
Thomas Gessner
Affiliation:
Fraunhofer Institute Reliability and Microintegration, Department Micro Devices and Equipment, Reichenhainer Strasse 88, 09126 Chemnitz, Germany Chemnitz University of Technology, Center of Microtechnologies, Reichenhainer Strasse 70, 09126 Chemnitz, Germany
Karla Hiller
Affiliation:
Chemnitz University of Technology, Center of Microtechnologies, Reichenhainer Strasse 70, 09126 Chemnitz, Germany
Konrad Kapser
Affiliation:
TEMIC TELEFUNKEN microelectronic GmbH, Ludwig Boelkow Allee, 81663 Muenchen, Germany
Helmut Seidel
Affiliation:
TEMIC TELEFUNKEN microelectronic GmbH, Ludwig Boelkow Allee, 81663 Muenchen, Germany
Joerg Bagdahn
Affiliation:
Fraunhofer Institute for Mechanics of Materials, Heideallee 19, 06120 Halle, Germany
Matthias Petzold
Affiliation:
Fraunhofer Institute for Mechanics of Materials, Heideallee 19, 06120 Halle, Germany
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Abstract

The paper describes a low temperature bond process based on an oxygen plasma pretreatment followed by 200°C and 400°C annealing which was to be integrated in our technological process flow to produce micromechanical devices in bulk and surface micromachining like acceleration sensors, gyroscopes and mirror arrays [1]. The results of infrared transmission and the measured bond strengths of the prepared test wafers will be presented in dependence on various pre-treatments and annealing times as well as temperatures. First die separation tests as well as additional detailed investigations showed that the bonding process has the potential to replace an anodic bonding process. During the development of the low temperature bond process it was shown that it is possible to reach a bond strength between 1.5 J/m2 and 2.8 J/m2 depending on the annealing conditions. To optimize the necessary size of the bond frame and to quantify the bond strength limits of the process a test pattern was designed with different arrangements of sensor structures like bond frames, spaces and chevron notch structures. The investigation showed the achieved bond yield in dependence on different sensor structures and bond conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Wiemer, M., Hiller, K., Gessner, T., Application of high and low temperature wafer bonding processes for bulkmicromachined components, The 1999 Joint International Meeting, Fifth international symposium on semiconductor wafer bonding: Science, technology and application, (1999) (in press).Google Scholar
2. Hiller, K., Hahn, R., Kaufmann, C., Kurth, S., Kehr, K., Gessner, T., Dötzel, W., Wiemer, M., Schubert, I., Low temperature approaches for fabrication of high frequency microscanners, Proc. of the SPIE, Vol. 3878, 58 (1999)CrossRefGoogle Scholar
3. Bagdahn, J., Plöβl, A., Wiemer, M., Petzold, M., Measurement of the Local Strength distribution of Directly bonded Silicon Wafers Using the Micro-Chevron-Test, The 1999 Joint International Meeting, Fifth international symposium on semiconductor wafer bonding: Science, technology and application, (1999) (in press).Google Scholar
4. Mitani, K., Silicon wafer bonding: an overwiew., Proc. of the 4th int. symposium on semiconductor wafer bonding: science, technology and application, Vol. 97/36, (1997), pp. 112 Google Scholar

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