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Impact of TiN/HfO2 Integration on Carrier Mobility

Published online by Cambridge University Press:  01 February 2011

Mikael Casse
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Laurent Thevenod
Affiliation:
laurent.thevenod@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Bernard Guillaumot
Affiliation:
mikael.casse@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Lucie Tosti
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Vincent Cosnier
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Jerome Mitard
Affiliation:
mikael.casse@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Gilles Reimbold
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Thierry Billon
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Mireille Mouis
Affiliation:
mikael.casse@cea.fr, IMEP, 23 rue des Martyrs, Grenoble cedex 9, N/A, 38016, France
Fabien Boulanger
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
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Abstract

We have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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