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Impact of Post Deposition Annealing on Characteristics of HfxZr1-xO2

Published online by Cambridge University Press:  31 January 2011

Dina Triyoso
Affiliation:
dina.triyoso@freescale.com, Freescale Semiconductor Inc., Technology Solutions Organization, 3501 Ed Bluestein Blvd; MD: K10, Austin, Texas, 78721, United States, 512-933-5912, 512-933-6962
Rama H. Hegde
Affiliation:
Rama.Hegde@freescale.com, Freescale Semiconductor Inc., Austin, Texas, United States
Rich Gregory
Affiliation:
ssginaz@cox.net, Freescale Semiconductor Inc., Austin, Texas, United States
Greg S. Spencer
Affiliation:
Greg.Spencer@freescale.com, Freescale Semiconductor Inc., Austin, Texas, United States
William Taylor Jr.
Affiliation:
Bill.Taylor@sematech.org, Freescale Semiconductor Inc., Austin, Texas, United States
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Abstract

In this paper the impact of post deposition annealing in various ambient on electrical properties of hafnium zirconate (HfxZr1-xO2) high-k dielectrics is reported. ALD HfxZr1-xO2 films are annealed in a nitrogen and/or oxygen ambient at 500°C to 1000°C. Devices annealed at 500°C in N2 has lower equivalent oxide thickness (EOT) of 10Å without significant increase in gate leakage (Jg), threshold voltage (Vt) and only a slight decrease in transconductance (Gm) values compared to 500°C O2 annealed devices. Furthermore, the impact of annealing HfxZr1-xO2 films in a reducing ambient (NH3) is studied. Optimized NH3 anneal on HfxZr1-xO2 results in lower CET, improved PBTI, low sub-threshold swing values, comparable high-field Gm with only a minor degradation in peak Gm compared to control HfxZr1-xO2. Finally, the impact of laser annealing vs. RTP annealed HfxZr1-xO2 films are reported. Laser annealing helped further stabilize tetragonal phase of HfxZr1-xO2 without inducing void formation. Good devices with low leakage, low EOT and high mobility are obtained for laser annealed HfxZr1-xO2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Triyoso, D.H., Hegde, R.I., Schaeffer, J.K., Roan, D., Tobin, P.J., Samavedam, S.B., White, B.E., Gregory, R., and Wang, X.-D., Appl. Phys. Lett. 88, 222901 (2006).CrossRefGoogle Scholar
2 Hegde, R. I., Triyoso, D.H.. Samavedam, S. and White, B.E. Jr. , J. Appl. Phys. 101 074113 (2007).CrossRefGoogle Scholar
3 Triyoso, D.H., Hegde, R.I., Schaeffer, J.K., Gregory, R., Wang, X.-D., Canonico, M., Roan, D., Hebert, E.A., Kim, K., Jiang, J., Rai, R., Kaushik, V., and Samavedam, S.B., J. Vac. Sci. Technol. B. 25 845–52 (2007).CrossRefGoogle Scholar
4 Lee, B.H., Kang, L., Nieh, R., Qi, W.-J., and Lee, J.C., Appl. Phys. Lett. 76, 1926 (2000).CrossRefGoogle Scholar
5 Jeong, S.W. and Roh, Y., J. Korean Phys. Soc. 50, 1865 (2007).CrossRefGoogle Scholar
6 Triyoso, D.H., Tobin, P.J., White, B.E. Jr. , Gregory, R., and Wang, X.D., Appl. Phys. Lett. 89, 132903 (2006).CrossRefGoogle Scholar
7 Lysaght, P.S., Foran, B., Bersuker, G., Chen, P.J., Murto, R.W., and Huff, H.R., Appl. Phys. Lett. 82 1266 (2003).CrossRefGoogle Scholar
8 Hegde, R.I and Triyoso, D.H., J. App. Phys. 104 p.094110–8 (2008).CrossRefGoogle Scholar
9 Triyoso, D.H., Spencer, G., Hegde, R.I., Gregory, R, Wang, X. D, Appl. Phys. Lett. 92 113501–1 (2008).CrossRefGoogle Scholar

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