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Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors

Published online by Cambridge University Press:  22 May 2015

Anupama Yadav
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Elena Flitsiyan
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Leonid Chernyak
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Fan Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Stephen J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32606, USA
Jerry Wayne Johnson
Affiliation:
IQE KC LLC, Taunton, Massachusetts 02780, USA
Igor Lubomirsky
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
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Abstract

AlGaN/GaN High Electron Mobility Transistors were exposed to 60Co gamma-irradiation to doses up to 300Gy. The impact of Compton- electron injection (due to gamma-irradiation) is studied through monitoring of minority carrier transport using Electron Beam Induced Current (EBIC) technique. Temperature dependent EBIC measurements were conducted on devices before and after exposure to the irradiation, which provide us with critical information on gamma-irradiation induced defects in the material. As a result of irradiation, minority carrier diffusion length increases significantly, with an accompanying decrease in the activation energy. This is consistent with the longer life time of minority carrier in the material’s valence band as a result of an internal electron injection and subsequent trapping of Compton electrons on neutral levels.

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Copyright
Copyright © Materials Research Society 2015 

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Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors
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