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Imaging, Structural and Chemical Analysis of Silicon Nanowires

Published online by Cambridge University Press:  11 February 2011

R. J. Barsotti Jr*
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
J. E. Fischer
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
C. H. Lee*
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
J. Mahmood
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
C. K. W. Adu
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16802
P. C. Eklund
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16802 Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
*Corresponding
#Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
&Department of Material Science and Engineering, KAIST, Daejon, Korea
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Abstract

Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiOx sheath of 1–2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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