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III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

Published online by Cambridge University Press:  10 February 2011

Kazuo Uchida
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Hiroki Tokunaga
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Yoshiaki Inaishi
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Nakao Akutsu
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Koh Matsumoto
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Tsuyoshi Itoh
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
Takashi Egawa
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
Takashi Jimbo
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
Masayoshi Umeno
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
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Abstract

We introduce III-V nitrides growth including GaN as well as InGaN by a newly developed atmospheric-pressure metal-organic vapor phase epitaxy system with a three layered flow channel which is a promising system for a large scale production. First, we have shown through computer simulation that a laminar flow of gases is maintained at 1000 °C in the three layered flow channel. Second, as a part of epitaxial results, we have found that the surface roughness of a low temperature-grown buffer layer on sapphire substrates, which can be measured by atomic force microscope, should be minimum in order to grow high quality GaN. We also report the growth of a double heterostructure of Ino. 15Gao.85N/GaN which shows a strong near band-edge emission in room temperature photoluminescence.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Nakamura, S. in Gallium Nitride and Related Materials, edited by Ponce, F. A., Dupuis, R. D., Nakamura, S. and Edmond, J. A. (Mater. Res. Proc.395, Pittsburgh PA, 1996), pp.879887.Google Scholar
[2] Koike, M., Shibata, N., Yamasaki, S., Nagai, S., Asami, S., Kato, H., Koide, N., Amano, H. and Akasaki, I. in Gallium Nitride and Related Materials, edited by Ponce, F. A., Dupuis, R. D., Nakamura, S. and Edmond, J. A. (Mater. Res. Proc.395, Pittsburgh PA, 1996), pp. 889895.Google Scholar
[3] Kong, H., Leonard, M., Bulman, G. Negley, G. and Edomond, J. in Gallium Nitride and Related Materials, edited by Ponce, F. A., Dupuis, R. D., Nakamura, S. and Edmond, J. A. (Mater. Res. Proc.395, Pittsburgh PA, 1996), pp. 903907.Google Scholar
[4] Hidaka, J., Arai, T., Tokunaga, H. and Matsumoto, K. (Proc. of 8th Int. Conf. on Metal Organic Vapour Phase Epitaxy Cardiff, Wales, UK, 1996), to be appeared in J. of Cryst. Growth.Google Scholar
[5] Kapolnek, D., Wu, X., Heying, B., Keller, S., Keller, B., Mishra, U., DenBaars, S. and Speck, J., Appl. Phys. Lett. 67, pp. 15411543 (1996)CrossRefGoogle Scholar
[6] Nakamura, S., Jpn. J. Appl. Phys. 30, pp. L1705L1707 (1991).CrossRefGoogle Scholar

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III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel
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