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Idea on Momentum Effect of Gaseous Beam Particles on Epitaxial Crystal Stiffness as to Thin Film Growth Such as Metal Organic Chemical Vapor Deposition Growth and Molecular Beam Growth

Published online by Cambridge University Press:  15 February 2011

Yasuyuki Saito*
Affiliation:
Microelectronics Ctr., Tamagawa Works, Toshiba Corp., 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan
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Abstract

The author reports on idea of momentum effect of gaseous beam particles as to thin film epitaxial crystal growth such as molecular beam epitaxial growth or metal organic chemical vapor deposition epitaxial growth on stiffness of epitaxial growth thin film. The author presented that liquid glass encapsulation squeeze compression effect of liquid-glass-encapsulation Czochralski technique (LEC) crystal growth [Y.Saito, presented at the 10th Int. Conf. on Crystal Growth, 1992], third element different from crystal matrix elements [Y.Saito, presented at the 9th Int. Conf. on Ternary and Multinary Compounds, 1993], light momentum pressure of substance cooling thermal cycle [Y.Saito, presented at the 1st Int.Symposium on Laser and Optoelectronics Technology & Applications, 1993] can yield firmly binded bonds of substance elements. On the other hand, collisions of particles sputtered from solid target slabs [Y.Saito, presented at the 2nd Int.Symposium on Sputtering & Plasma Processes, 1993] or accelerated ions or particles evaporated from molten metals with themselves on the thin films can yield binded bonds. It was shown that internal compression in a crystal by ion implantation in crystal cell lattices can make the refractory state to gas phase chemical attack.[Y.Saito, in the Materials Research Society Symposium Proc. Vol. 279, pp. 135–140.] From these results, we can consider momentum effect at collision on binding state. After collision binding, internal compression by thermal transition variation in a multilayer structure during cooling thermal cycle influences binding stiffness.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

[1] Saito, Y., J.Appl.Phys. 72, 5451 (1992).Google Scholar
[2] Saito, Y., J.Appl.Phys. 71, 3544 (1992).Google Scholar
[3] Saito, Y., presented at the 9th Int.Conf. on Crystal Growth (ICCG-9) (General Session 10: Characterization Technique 1, Aug.22, 1989, Sendai, Japan), in the Abstracts, 22pE15, p. 196.Google Scholar
[4] Saito, Y., J.Appl.Phys. 68, 830 (1990).Google Scholar
[5] Saito, Y., presented at the Jpn.Soc.Appl.Phys. 53rd.Autumn Meeting (1992), in the Extented Abstracts (JSAP Cat. Num.AP921124–01), 18p—ZH—17, p.318.Google Scholar
[6] Saito, Y., presented at the 10th Int. Conf. on Crystal Growth (ICCG-10) (Session 2C in Palomar Room of Sheraton Habor Island Hotel, San.Diego, U.S.A., Aug.17, 1992), submitted paper (#B118) as a proceedings paper.Google Scholar
[7] Saito, Y., presented at the 10th Int. Conf. on Crystal Growth (ICCG-10) (Session 2C in Palomar Room of Sheraton Habor Island Hotel, San.Diego, U.S.A., Aug.18, 1992), submitted paper (#C29) as a proceedings paper.Google Scholar
[8] Saito, Y., submitted to J.Cryst.Growth (JCG8783) by hand at Univ. of Bristol. In the future, the revised ver. will be submitted.Google Scholar
[9] Saito, Y., submitted to J.Cryst.Growth (JCG8782) by hand at Univ. of Bristol. In the future, the revised ver. will be submitted.Google Scholar
[10] Saito, Y. and Fujii, T., in the Materials Research Society Symposium Proc. eds. Jones, K.S., Pearton, S.J. and Kanber, H., vol.300, pp.531536.Google Scholar
[11] Saito, Y., in the Proc. of the 1st Int.Symposium on Laser and Optoelectronics Technology Applications (ISLOE'93) eds. Chong, T.C. and Lu, Y.F. (Nov.12, 1993, Singapore), pp.330335.Google Scholar
[121 Saito, Y., in the Proc. of the 1st Int.Symposium on Laser and Optoelectronics Technology Applications (ISLOE'93) eds. Chong, T.C. and Lu, Y.F. (Nov.12, 1993, Singapore), pp.336341.Google Scholar
[13] Saito, Y., in the Proc. of the 2nd Int. Symposium Sputtering & Plasma Processes (ISSP'93) Kusano, Chairperson E. and Vice chairperson Kitahara, H. (May.28, 1993, Tokyo, Japan), pp.257262.Google Scholar
[14] Saito, Y., in the Materials Research Society Symposium Proc.Vol.300, eds. Jones, K.S., Pearton, S.J. and Kanber, H., pp.267272.Google Scholar
[15] Saito, Y., presented at the 9th Int.Conf.on Ternary and Multinary compounds (ICTMC9) (Aug.11, 1993, Yokohama, Japan), 11pP53, p.237 in Abstracts, submitted proceedings paper (#224).Google Scholar
[16] Saito, Y., in the Materials Research Society Symposium Proc. eds. Nastasi, M., Harriott, L.R., Herbots, N., and Averback, R.S., Vol.279, pp.135140.Google Scholar
[17] Saito, Y., presented at the 3rd IU–MRS Int.Conf. on Advanced Materials, Symposium U, in the Abstracts, UP5.5, p.U12, (Sept.3, 1993, Tokyo), Saito, Y. and Sugimura, Y. in the Proc.Google Scholar
[18] Ohoba, Y. and his colleagues, their work.Google Scholar