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Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering

Published online by Cambridge University Press:  01 February 2011

Rinaldo Trotta
Affiliation:
rinaldo.trotta@roma1.infn.it, Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma 00185, Italy
Antonio Polimeni
Affiliation:
polimeni@roma1.infn.it, Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Marco Felici
Affiliation:
marco.felici@epfl.ch, Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Giorgio Pettinari
Affiliation:
giorgio.pettinari@roma1.infn.it, Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Mario Capizzi
Affiliation:
capizzi@roma1.infn.it, Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Andrea Frova
Affiliation:
andrea.frova@roma1.infn.it, Sapienza Universita' di Roma, Dipartimento di Fisica, P.le A. Moro 2, Roma, 00185, Italy
Giancarlo Salviati
Affiliation:
salviati@imem.cnr.it, IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, Parma, 43010, Italy
Laura Lazzarini
Affiliation:
laura@imem.cnr.it, IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, Parma, 43010, Italy
Nicola Armani
Affiliation:
narmani@imem.cnr.it, IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, Parma, 43010, Italy
Luigi Mariucci
Affiliation:
luigi.mariucci@ifn.cnr.it, IFN-CNR, Via Cineto Romano 42, Roma, 00156, Italy
Giorgio Bais
Affiliation:
bais@infis.univ.trieste.it, TASC INFM-CNR, Parco Area delle Scienze, Trieste, 34012, Italy
Faustino Martelli
Affiliation:
martelli@tasc.infm.it, TASC INFM-CNR, Parco Area delle Scienze, Trieste, 34012, Italy
Silvia Rubini
Affiliation:
rubini@tasc.infm.it, TASC INFM-CNR, Parco Area delle Scienze, Trieste, 34012, Italy
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Abstract

The capability of hydrogen to passivate nitrogen in dilute nitrides is exploited to in-plane engineer the electronic properties of Ga(AsN)/GaAs heterostructures. Two methods are presented: i) by deposition of hydrogen-opaque metallic masks on Ga(AsN) and subsequent hydrogen irradiation, we artificially create zones of the crystal having the band gap of untreated Ga(AsN) surrounded by GaAs-like barriers; ii) by employing an intense (∼100 nA) and narrow (∼100 nm) beam of electrons, we dissociate the complexes formed by N and H in a spatially delimited part of a hydrogenated Ga(AsN) sample. As a consequence, in the spatial regions irradiated by the electron beam, hydrogenated Ga(AsN) recovers the smaller energy gap it had before hydrogen implantation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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