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Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

Published online by Cambridge University Press:  01 January 1993

Dong Gil Kim
Affiliation:
Anyang Research Lab.,GoldStar Co. Ltd., Anyang-shi 430-080,Korea
Jin Jang
Affiliation:
Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
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Abstract

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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