Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-22T17:22:20.633Z Has data issue: false hasContentIssue false

Hydrogenated Silicon Films Prepared by Remote Plasma CVD

Published online by Cambridge University Press:  25 February 2011

Sung Chul Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Seung Kyu Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sung Mo Soe
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sung Ok Koh
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sung Shil Ihm
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jung Mok Jun
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Tae Gon Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Moon Hyun Chung
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Kyung Ha Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Hyon Kynn Song
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jin Jang
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jung Tae Hwang
Affiliation:
Dept. of Electronics, Kyung Hee University, Suchun-ri, Yongin-gun, Kyungki-do, Korea
Kwan Soo Chung
Affiliation:
Dept. of Electronics, Kyung Hee University, Suchun-ri, Yongin-gun, Kyungki-do, Korea
Get access

Abstract

We have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Tsu, D.V., Lucovsky, G. and Mantini, M.J., Phys. Rev. B33, 7069 (1986).Google Scholar
Lucovsky, G., Fitch, J.T., Tsu, D.V. and Kim, S.S., J. Vac. Sci. Technol. A7, 1135 (1989)Google Scholar
3. Parsons, G.N., Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol. A6, 1912 (1988).Google Scholar
4. Tsu, D.V., Parsons, G.N., Lucovsky, G. and Walkins, M.M., J. Vac. Sci. Technol. A7, 1115 (1989)Google Scholar
5. Fritzsche, H., Solar. Energy Mater. 3, 447 (1980).Google Scholar
6. Cody, G.D., Abeles, B., Wronski, C.R., Stephens, R.B., and Brooks, B., Sol. Cells 2, 227 (1980)Google Scholar
7. Hotta, S., Nishimoto, N., Tawada, Y., Okamoto, H. and Hamakawa, Y., Jpn. J. Appl. Phys. Suppl. 211, 289 (1982).Google Scholar
8. Matsuda, A., Kumagai, K. and Tanaka, K., Jpn. J. Appl. Phys. 22, L34 (1983).Google Scholar