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Hydrogen Neutralization of Chalcogen double donor Centers in Single-Crystal Silicon

Published online by Cambridge University Press:  26 February 2011

Gerhard Pensl
Affiliation:
Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, Glückstraße 9, D-8520 Erlangen, Federal Republic of Germany
G. Roos
Affiliation:
Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, Glückstraße 9, D-8520 Erlangen, Federal Republic of Germany
P. Stolz
Affiliation:
Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, Glückstraße 9, D-8520 Erlangen, Federal Republic of Germany
N. M. Johnson
Affiliation:
Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304
C. Holm
Affiliation:
Holm Heliotronic GmbH, P.O.Box 1129, D-8263 Burghausen, Federal Republic of Germany
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Abstract

Chalcogen (S,Se,Te) -doped silicon samples were hydrogen neutralized by different passivation techniques. The electrically active double-donor densities were determined by DLTS measurements. DLTS spectra reveal that both donor levels recover simultaneously. The activation energy for re-activation of neutralized isolated and pure pair sulphur double-donors is Ea(So/+) = 2,13 ± 0,15 eV and Ea(S2o/+) = 2,1 ± 0,15 eV, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

1.Pensl, G., Roos, G., Holm, C., Wagner, P., Materials Science Forum 10–12, pp.911916 (1986) Trans Tech Publications Ltd., Switzerland,-ed. von Bardeleben, H.J.Google Scholar
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