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Homoepitaxial Growth of Si at Low Temperature (325 °C)

Published online by Cambridge University Press:  10 February 2011

J. Platen
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, D-12489 Berlin, Germany
B. Selle
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, D-12489 Berlin, Germany
I. Sieber
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, D-12489 Berlin, Germany
U. Zeimer
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, D-12489 Berlin, Germany Ferdinand-Braun-Institut, Rudower Chaussee 5, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

Electron cyclotron resonance chemical vapor deposition (ECR-CVD) is used to grow to prepare epitaxial films on Si(100), Si(111), and Si(311) at 325 °C with a growth rate of 10…12 nm/min. On Si(100) up to a layer thickness of more than 300 nm the films exhibit a well defined and smooth interface and a perfectly ordered lattice structure. Beyond a critical thickness of about 500 nm the formation of conically shaped, amorphous regions was observed. At a thickness of 1.6 µm only 10… 15 % of the surface consists of these amorphous cones. On Si(311), Si(111), and Si(011) the critical epitaxial thicknesses hepi depends on the crystallographic orientation of the substrate in the sequence hepi(311) > hepi(111) > hepi(011) with an abrupt change of the film structure from crystalline to amorphous

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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