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High-Temperature Thermoelectric Properties of Pb1-xSnxTe:In

Published online by Cambridge University Press:  01 February 2011

Vladimir Jovovic
Affiliation:
joottu-thiagaraj.1@osu.edu, The Ohio State University, Mechanical Engineering, 201 West 19th Ave., W490 Scott Laboratory, Columbus, OH, 43210, United States
Suraj Joottu Thiagarajan
Affiliation:
joottu-thiagaraj.1@osu.edu, The Ohio State University, Columbus, OH, 43210, United States
Joseph P. Heremans
Affiliation:
heremans.1@osu.edu, The Ohio State University, Columbus, OH, 43210, United States
Dmitry Khokhlov
Affiliation:
khokhlov@mig.phys.msu.ru, Moscow State University, Moscow, 119992, Russian Federation
Tanya Komissarova
Affiliation:
khokhlov@mig.phys.msu.ru, Moscow State University, Moscow, 119992, Russian Federation
Andrei Nicorici
Affiliation:
nicorici@usm.md, Moldova Academy of Sciences, Kishinev, 2009MD, Moldova
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Abstract

Indium in Pb1-xSnxTe alloys forms a resonant energy level in the conduction or valence bands, depending on x. In this study we investigate temperature dependence of the In level from 80 to 400K, complementing our previous work at 80 K. Measurements of electrical resistivity, thermopower, Hall and transverse Nernst-Ettinghausen effect are used to assess carrier mobility, Fermi level and scattering coefficient. Measurements are performed on a set of p and n type Pb1-xSnxTe:In with 0 < x < 30 at% and In up to 3 at%. We show that with increasing temperature the Fermi level crosses into the gap. It had been suggested theoretically that hybridization of the In level with one band at the Fermi level could have had a positive effect on the thermoelectric properties of materials, but the present results illustrate the need for temperature-dependent modeling and experimentation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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