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High-T c and high-J c SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy

Published online by Cambridge University Press:  29 August 2012

Michio Naito
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Shinya Ueda
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Soichiro Takeda
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Shiro Takano
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Akiyasu Yamamoto
Affiliation:
Department of Applied Chemistry, University of Tokyo, Hongo, Tokyo 113-8656, Japan
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Abstract

We report on our growth of superconducting SmFeAs(O,F) films by F diffusion. In our process, F-free SmFeAsO films were grown by molecular beam epitaxy (MBE) first, and subsequently F was introduced into the films via F diffusion from an overlayer of SmF3. We performed a detailed comparison of the growth conditions and also the properties of resultant films for fluoride and oxide substrates. The best films on CaF2 exhibited a high transition temperature, T c on (T c end) = 57.8 K (56.4 K) at highest, which may exceed the highest T c ever reported for bulk samples. Furthermore the films on CaF2 also showed high critical current density over 1 MA/cm2 in self-field at 5 K.

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Copyright
Copyright © Materials Research Society 2012

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References

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High-T c and high-J c SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy
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