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High-Quality Polycrystalline Silicon thin Films Prepared by Solid Phase Crystallization (Spc) Method

Published online by Cambridge University Press:  28 February 2011

T. Matsuyama
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
T. Baba
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
M. Tanaka
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
S. Tsuda
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
H. Nishiwaki
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
S. Nakano
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
H. Hanafusa
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Y. Kuwano
Affiliation:
Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

The relationship between the grain size of poly-Si after SPC and the structure of a-Si before SPC was studied. The structure of a-Si was characterized by TA/TO: the Raman intensity ratio of the Transverse Acoustic (TA) like band and the Transverse Optical (TO) like band. A good positive correlation between the grain size and TS/TO was revealed for the first time. The nucleation and growth kinetics were speculated by using a thermodynamic model. The grain size could be enlarged up to 6 μ m by applying textured substrates to a-Si with a large structural disorder. This film was applied to the active layer of solar cells, and a collection efficiency of 51% at 900 nm was obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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