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High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

Published online by Cambridge University Press:  28 February 2011

T. Baba
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka 573, Japan
T. Matsuyama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka 573, Japan
T. Sawada
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka 573, Japan
T. Takahama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka 573, Japan
K. Wakisaka
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka 573, Japan
S. Tsuda
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

We succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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