Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
Hostname: page-component-56f9d74cfd-fv4mn Total loading time: 0.314 Render date: 2022-06-26T18:21:16.633Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true }
  • English
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

Published online by Cambridge University Press:  25 February 2011

Hiroyuki Matsunami
Hiroyuki Matsunami*
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
Get access

Abstract

Single crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Nelson, W.E., Halden, F.A. and Rosengreen, A., J.Appl.Phys. 37, 333 (1966).CrossRefGoogle Scholar
2) Ferry, D.K., Phys.Rev. B 12, 2361 (1975).CrossRefGoogle Scholar
3) Lely, J.A., Ber.Deut.Keram.Ges. 32, 229 (1955).Google Scholar
4) for example, Tombs, N.C., Comer, J.J. and Fitzgerald, J.F., Solid State Electron. 8, 839 (1965).CrossRefGoogle Scholar
5) for example, Jackson, D.M. Jr. and Howard, R.W., Trans.Metall.Soc. AIME. 233, 468 (1965).Google Scholar
6) Matsunami, H., Thin Films from Free Atoms and Particles ed. By Klabunde, K.J., Academic Press, 1985, p. 301.CrossRefGoogle Scholar
7) Nishino, S., Hazuki, R., Matsunami, H. and Tanaka, T., J.Electrochem. Soc. 127, 2674 (1980).CrossRefGoogle Scholar
8) Kuroiwa, K. and Sugano, T., J. Electrochem.Soc. 120, 138 (1973).CrossRefGoogle Scholar
9) Matsunami, H., Nishiino, S. and Ono, H., IEEE Trans.Electron Devices ED–28, 1235 (1981).CrossRefGoogle Scholar
10) Nishino, S. Suhara, H. and Matsunami, H., Ext.Abstr. 15th Conf. Solid State Devices and Materials (1983) p. 317.Google Scholar
11) Nishino, S., Powell, J.A. and Will, H.A., Appl.Phys.Lett. 42, 460 (1983).CrossRefGoogle Scholar
12) Nishino, S., Shibahara, K., Dohmae, S. and Matsunami, H., Late News Abstr.16th Conf. Solid State Devices and Materials (1984) p. 8.Google Scholar
13) Nishino, S., Suhara, H., Ono, H. and Matsunami, H., J.Appl.Phys. (1987) to be published.Google Scholar
14) Addamiano, A. and Sprague, J.A., Appl.Phys.Lett. 44, 525 (1984).CrossRefGoogle Scholar
15) Liaw, H.P. and Davis, R.F., J.Electrochem.Soc. 131, 3014 (1984).CrossRefGoogle Scholar
16) Liaw, H.P. and Davis, R.F., J.Electrochem.Soc. 132, 642 (1985).CrossRefGoogle Scholar
17) Sasaki, K., Sakuma, E., Misawa, S., Yoshida, S. and Gonda, S., Appl. Phys.Lett. 45, 72 (1984).CrossRefGoogle Scholar
18) Suzuki, A., Uemoto, A., Shigeta, M., Furukawa, K. and Nakajima, S., Appl.Phys.Lett. 49, 450 (1986).Google Scholar
19) Segall, B., Atterovitz, S.A., Haigland, E.J. and Matus, L.G., Appl. Phys.Lett. 49, 584 (1986).CrossRefGoogle Scholar
20) Yamanaka, M., Daimon, H., Sakuma, E., Misawa, S. and Yoshida, S., J. Appl.Phys. 61, 599 (1987).CrossRefGoogle Scholar
21) Kondo, Y., Takahashi, T., Ishii, K., Hayashi, Y., Sakuma, E., Misawa, S., Daimon, H., Yamanaka, M. and Yoshida, S., IEEE Electron Device Lett. EDL–7, 404 (1986).Google Scholar
22) Yoshida, S., Daimon, H., Yamanaka, M., Sakuma, E., Misawa, S. and Endo, K., J.Appl.Phys. 60, 2989 (1986).CrossRefGoogle Scholar
23) Shibahara, K., Saito, T., Nishino, S. and Matsunami, H., IEEE Electron Device Lett. EDL–7, 692 (1986).CrossRefGoogle Scholar
24) Furukawa, K., Hatano, A., Uemoto, A., Fujii, Y., Nakanishi, K., Shigeta, M., Suzuki, A. and Nakajima, S., IEEE Electron Device Lett. EDL–8, 48 (1987).CrossRefGoogle Scholar
25) Carter, C.H. Jr., Edmond, J.A., Palmour, J.W., Ryu, J.Y., Kim, H.J. and Davis, R.F., Mat.Res.Soc. Meeting (1985).Google Scholar
26) Nutt, S.R., Smith, D.J., Kim, H.J. and Davis, R.F., Appl.Phys.Lett. 50, 203 (1987).CrossRefGoogle Scholar
27) Shibahara, K., Nishino, S and Matsunami, H., J.Cryst.Growth 78, 538 (1986).CrossRefGoogle Scholar
28) Shibahara, K., Nishino, S. and Matsunami, H., this symposium.Google Scholar
29) Pirouz, P., Chorey, C.M. and Powell, J.A., Appl.Phys.Lett. 50, 221 (1987).Google Scholar
30) Shibahara, K., Nishino, S. and Matsunami, H., Ext. Abstr. 18th Conf. Solid State Devices and Materials (1986) p. 717.Google Scholar
31) Furukawa, K., Uemoto, A., Shigeta, M., Suzuki, A. and Nakajima, S., Appl.Phys.Lett. 48, 1536 (1986).CrossRefGoogle Scholar
32) Sibahara, K., Nishino, S. and Matsunami, H., Jpn.J.Appl.Phys. 23, L862 (1984).CrossRefGoogle Scholar
33) Avila, R.E., Kopanski, J.J. and Fung, C.D., Appl.Phys.Lett. 49, 334 (1986).CrossRefGoogle Scholar
34) Yoshida, S., Sasaki, K., Sakuma, E., Misawa, S. and Gonda, S., Appl. Phys.Lett. 46, 766 (1985).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *