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High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies

Published online by Cambridge University Press:  01 February 2011

Matty Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
B. Brijs
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
T. Conard
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
S. DeGendt
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
A. Delabie
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. Heyns
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
B. Onsia
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
L. Ragnarsson
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
O. Richard
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
S. Van Elshocht
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
C. Zhao
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
J.W. Maes
Affiliation:
ASM Belgium, Kapeldreef 75, B-3001 Leuven, Belgium
L. Daté
Affiliation:
Applied Materials France, Meylan, France
D. Pique
Affiliation:
Applied Materials France, Meylan, France
E. Young
Affiliation:
International Sematech residents at Imec, Leuven, Belgium
W. Tsai
Affiliation:
International Sematech residents at Imec, Leuven, Belgium
Y. Shimamoto
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan.
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Abstract

In the quest for ever smaller transistor dimensions, the well-known and reliable SiO2 gate dielectric material needs to be replaced by alternatives whith higher dielectric constants in order to reduce the gate leakage. Candidate materials are metal oxides such as HfO2. Themost promising deposition techniques, next to Physical Vapor Deposition, appear to be ALCVD and MOCVD. In this paper, we compare the most important characteristics of layers from both proces techniques and assess their relevance to gate stack applications: density, crystallisation, impurities, growth mechanism, interfacial layers, dielectric constant, mobility. Although we find some minor differences, layers from both techniques mostly show striking similarities in many aspects, both positive and negative.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies
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