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High Quality P-Type Gan Films Grown By Plasma-Assistedmolecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. M. Myoung
Affiliation:
Departments of Materials Science and Engineering
C. Kim
Affiliation:
Physics
K. H. Shim
Affiliation:
Departments of Materials Science and Engineering
O. Gluschenkov
Affiliation:
Electrical and Computer Engineering k-kim8@uiuc.edu
K. Kim
Affiliation:
Electrical and Computer Engineering k-kim8@uiuc.edu
M. C. Yoo
Affiliation:
University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL 61801 On leave from Samsung Advanced Institute of Technology
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Abstract

p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4× 1020 cm−3, and for the same sample, the mobility was 2.5 cm2/Vs It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallictype conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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