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High Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source

Published online by Cambridge University Press:  15 February 2011

Seung Yeop Myong
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea Tel: +82-42-869-8046, 8027/ FAX: +82-42-869-8530/ E-mail:, myong@cais.kaist.ac.kr
Hyung Kew Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea Tel: +82-42-869-8046, 8027/ FAX: +82-42-869-8530/ E-mail:, myong@cais.kaist.ac.kr
Euisik Yoon
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea Tel: +82-42-869-8046, 8027/ FAX: +82-42-869-8530/ E-mail:, myong@cais.kaist.ac.kr
Koeng Su Lim
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea Tel: +82-42-869-8046, 8027/ FAX: +82-42-869-8530/ E-mail:, myong@cais.kaist.ac.kr
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Abstract

Hydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (~10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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High Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source
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