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High Performance Organic Field-Effect Transistors and Integrated Inverters

Published online by Cambridge University Press:  21 March 2011

A. Ullmann
Affiliation:
SIEMENS AG, Erlangen, Germany
J. Ficker
Affiliation:
SIEMENS AG, Erlangen, Germany
W. Fix
Affiliation:
SIEMENS AG, Erlangen, Germany
H. Rost
Affiliation:
SIEMENS AG, Erlangen, Germany
W. Clemens
Affiliation:
SIEMENS AG, Erlangen, Germany
I. Mcculloch
Affiliation:
Merck NB-SC, UK, Southampton, UK
M. Giles
Affiliation:
Merck NB-SC, UK, Southampton, UK
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Abstract

Integrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

[1] Gelinck, G.H., Geuns, T.C.T., Leeuw, D.M. de, Appl. Phys. Lett. 77(10), 1487 (2000)CrossRefGoogle Scholar
[2] Schön, J. H., Berg, S., Kloc, Ch., Batlogg, B., Science 287 10221023 (2000)Google Scholar
[3] Sirringhaus, H., Tessler, N., Friend, R.H., Synthetic Metals 102 857860 (1999)CrossRefGoogle Scholar
[4] Rogers, J. A., Bao, Z., Dodabalapur, A., IEEE Electron Devices Letter, 21 100103, (2000)CrossRefGoogle Scholar
[5] Brown, A. R., Jarrett, C.P., Leeuw, D. M. de, Matters, M., Synthetic Metals 88 3755 (1997)CrossRefGoogle Scholar
[6] Tietze/Schenk Halbleiterschaltungtechnik, Springer Verlag (1999)CrossRefGoogle Scholar
[7] Horowitz, G., Adv. Mater, 10 No.5 365377 (1998)3.0.CO;2-U>CrossRefGoogle Scholar

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