Skip to main content Accessibility help
×
Home
Hostname: page-component-5959bf8d4d-dtbwl Total loading time: 0.168 Render date: 2022-12-09T05:42:09.474Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

Published online by Cambridge University Press:  07 January 2014

Yunxuan Yu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Xian Gong
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Dong Liu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China Peking University Shenzhen Graduate School, Shenzhen, 518055, China
Yan Wang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Jinfeng Kang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Get access

Abstract

The effect of Y dopant incorporated into ZTO with different Y ratios in Y-ZTO system on the performances of ZTO-based TFTs is investigated by using sol-gel process. The proper Y doped ZTO present both high film crystallization temperature and superior electrical properties as an active channel layer of TFTs. The fabricated YZTO-based TFTs with 11% Y show the excellent devices performance such as the channel field effect mobility of 1.756 cm2/Vs, SS of 2.13 V/dec, threshold voltage of 0.8V and on/off ratio of 3.12×106.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Hyung Lim, Jun, Hyun Shim, Jong, APPLIED PHYSICS LETTERS 95, 012108 2009
Fortunato*, E., Barquinha, P., Martins, R., Advanced Materials, Volume 24, Issue 22, pages 29452986, June 12, 2012 10.1002/adma.201103228CrossRef
Seo, Seok-Jun,JOURNAL OF PHYSICS D: APPLIED PHYSICS42 (2009) 035106 (5pp)10.1088/0022-3727/42/3/035106CrossRef
Hong Jun, LeeJournal of the Korean Physical Society April 2013, Volume 62, Issue 8, pp 11761182
Ting∗, Chu-Chi;, Chang, Shiep-Ping, Li, Wei-Yang, Wang, Ching-Hua, Applied Surface Science, 284(2013) 397404, July 29, 2013 10.1016/j.apsusc.2013.07.111CrossRef
Young Koo, Chang, Song, Keunkyu, Jung, Yangho, Yang, Wooseok, Kim, Seung-Hyun, Jeong, Sunho, and Moon, Jooho, ACS Appl. Mater. Interfaces, 2012, 4(3), pp 14561461
Joon Kim, Si, et al. ., Journal of Crystal Growth 326 (2011) 163165.
Jeong, W. H. et al. ., Thin Solid Films. 519(2011)57405743.10.1016/j.tsf.2010.12.210CrossRef
Yong Chong, Ho, et al. ., Appl. Phys. Lett. 99, 161908 (2011).10.1063/1.3655197CrossRef
Hyun Yoon, Doo, et al. ., Journal of Crystal Growth 326 (2011) 171174.10.1016/j.jcrysgro.2011.01.090CrossRef
Shin, Hyun Soo, Kim, Gun Hee, Jeong, Woong Hee, Ahnl, Byung Du, and Kim, Hyun Jae, Japanese Journal of Applied Physics 49 (2010) 03CB01

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *