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High Indium Content Ingan Films and Quantum Wells.

Published online by Cambridge University Press:  10 February 2011

W. Van Der Stricht ,
K. Jacobs ,
I. Moerman ,
P. Demeester ,
L. Considine ,
E. J. Thrush ,
J. A Crawley  and
P. Ruterana
W. Van Der Stricht
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
K. Jacobs
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
I. Moerman
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
P. Demeester
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
L. Considine
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
E. J. Thrush
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
J. A Crawley
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
P. Ruterana
Affiliation:
Laboratoire de Recherches et d'Etudes sur les Materiaux, ISMRA, Caen, France
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Abstract

InGaN films and InGaN/GaN quantum wells with high indium content have been grown by MOVPE and characterised to evaluate the growth process and the indium incorporation efficiency. The characterisation techniques include photoluminescence, DC X-ray and TEM. The closed spaced vertical rotating disk reactor configuration results in a very high Indium incorporation for InGaN material, compared to other configurations. InGaN layers with an indium composition up to 56 % have been deposited which still exhibit very good optical properties (intense PL emission). The influence of various growth conditions on the InGaN composition and quality have been investigated to optimize the layer quality. TEM diffraction patterns have shown that the ternary InGaN layer can be chemically ordered. The In and Ga atoms occupy respectively the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6 3mc symmetry group of the wurtzite GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 107
Copyright
Copyright © Materials Research Society 1998

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