Skip to main content Accessibility help
×
Home
Hostname: page-component-8bbf57454-s7zjg Total loading time: 0.21 Render date: 2022-01-25T03:37:55.754Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

High Indium Content Ingan Films and Quantum Wells.

Published online by Cambridge University Press:  10 February 2011

W. Van Der Stricht
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
K. Jacobs
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
I. Moerman
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
P. Demeester
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
L. Considine
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
E. J. Thrush
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
J. A Crawley
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
P. Ruterana
Affiliation:
Laboratoire de Recherches et d'Etudes sur les Materiaux, ISMRA, Caen, France
Get access

Abstract

InGaN films and InGaN/GaN quantum wells with high indium content have been grown by MOVPE and characterised to evaluate the growth process and the indium incorporation efficiency. The characterisation techniques include photoluminescence, DC X-ray and TEM. The closed spaced vertical rotating disk reactor configuration results in a very high Indium incorporation for InGaN material, compared to other configurations. InGaN layers with an indium composition up to 56 % have been deposited which still exhibit very good optical properties (intense PL emission). The influence of various growth conditions on the InGaN composition and quality have been investigated to optimize the layer quality. TEM diffraction patterns have shown that the ternary InGaN layer can be chemically ordered. The In and Ga atoms occupy respectively the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6 3mc symmetry group of the wurtzite GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64 (1994) 1687.Google Scholar
[2] Ferreira, L.G., Wei, S.H., and Zunger, A., Phys. Rev.B 40, 3197(1989)Google Scholar
[3] Bellon, P., Chevalier, J.P., Martin, G.P., Dupon-Nivet, E., Thiébaut, C., and André, J.P., Appl. Phys. Lett. 52, 567(1988).Google Scholar
[4] Ruterana, P., Nouet, G.. Van der Stricht, W., Moerman, L. and Considine, L., submitted to Appl. Phys. Lett., 1997.Google Scholar
[1] Ponce, F.A., Galloway, S.A., Cherns, D., Kerns, R.S., Proceedings ICNS-2 Tokushima 1997, M2–6, pp.2627.Google Scholar
[6] Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., Vol.70 (21), 1997, pp. 28222824.Google Scholar
[7] Sohmer, A., Off, J., Bolay, H., Harle, V., Syganow, V., Im, J., Wagner, V., Adler, F., Hangleider, A., Dornen, A., Scholz, F., Brunner, D., Ambacher, O. and Lakner, H., MRS Internet Journal of NSR, Volume 2, art. 14, 1997.Google Scholar
[8] Ramer, J.C. and Hersee, S.D., presented at LEOS topical meeting, 1997.Google Scholar
[1] Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J. A., Thrush, E.J., Middleton, P.G., Trager-Cowan, C. and O'Donnell, K.P., The International Symposium on GaN and Related Materials, Proceedings MRS Fall Meeting 1995, 231.Google Scholar
[10] Thrush, E.J., Crawley, J. A., Van der Stricht, W., Moerman, I., May, L., Nicholls, E. and Vergani, G., Wide band gap semiconductor light emitters, Colloquium organized by Professional Group El 3 of the IEE in association with the Institute of Physics 1996 (London).Google Scholar
[11] Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J. A. and Thrush, E.J., J. Cryst. Growth, 170 (1997), 344.Google Scholar
[12] Keller, S. Mishra, U.K. and DenBaars, S.P., presented at OMVPE VII, Dana-Point (1997).Google Scholar
[13] Keller, S., Keller, B.P., Kapolnek, D.. Mishra, U.K., DenBaars, S.P., Shmagin, I.K., kolbas, R.M. and Krishnankutty, S., J. Cryst. Growth, Vol 170. 1997, pp. 349352.Google Scholar
[14] Lu, H., Thothathiri, M., Wu, Z. and Bath, I., J. Electr. Mat., Vol.26(3), 1997, pp. 281.Google Scholar
[15] Singh, R., Doppalapudi, D. and Moustakas, T.D., Appl. Phys. Lett., Vol.70 (9), 1997, pp. 10891091.Google Scholar
[16] Ho, I. and Stringfellow, G.B., Appl. Phys. Lett., Vol 69. (18), 1996, pp. 27012703.Google Scholar
[17] Kawaguchi, Y., Shimizu, M., Hiramatsu, K. and Sawaki, N., Mat. Res. Soc. Symp. Proc., Vol. 449, 1997, pp. 8994.Google Scholar
[18] Romano, L.T., McClusky, M.D., Krusor, B.S., Bour, D.P. and Chua, C., proceedings ICNS'97, M2–9, pp.3233.Google Scholar
[19] Tran, C.A.,Karlicek, R. F., Schurman, M., Salagaj, T. and Thomson, A., Stall, R., presented at Leos Topical Meeting, 1997.Google Scholar
[20] Sato, H., Suguhara, T, Naoi, Y. and Sakai, S., Proceedings ICNS'97, M2–7, pp 2829.Google Scholar
[21] Keller, S., Keller, B.P.,Kapolnek, D., Abare, C., Masui, H., Coldren, L.A., Mishra, U.K. and DenBaars, S.P., Appl. Phys. Lett., Vol.68, pp. 31473149.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

High Indium Content Ingan Films and Quantum Wells.
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

High Indium Content Ingan Films and Quantum Wells.
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

High Indium Content Ingan Films and Quantum Wells.
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *