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High Efficiency Blue Organic Light Emitting Devices doped by BCzVBi in Hole and Electron Transport Layer

Published online by Cambridge University Press:  10 June 2013

Nam Ho Kim*
Affiliation:
Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan, Korea
You-Hyun Kim*
Affiliation:
Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan, Korea
Ju-An Yoon
Affiliation:
Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan, Korea
Sang Youn Lee
Affiliation:
Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan, Korea
Hyeong Hwa Yu
Affiliation:
Department of Engineering Physics, McMaster University, Hamilton, Canada
Ayse Turak
Affiliation:
Department of Engineering Physics, McMaster University, Hamilton, Canada
Woo Young Kim*
Affiliation:
Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan, Korea Department of Engineering Physics, McMaster University, Hamilton, Canada
*
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Abstract

The electroluminescent characteristics of blue organic light-emitting diodes(BOLEDs) were fabricated with single emitting layer using host-dopant system and doped charge carrier transport layers. The structure of the high efficiency BOLED device was; NPB(600Å)/NPB:BCzVBi-7%(100Å)/ADN:BCzVBi-7%(300Å)/BAlq:BCzVBi-7%(100Å)/BAlq(200Å)/Liq(20Å)/Al(1200Å) to optimize probability of exciton generation by doping BCzVBi in emitting layer and hole/electron transport layers(HTL/ETL) as well. Luminance and luminous efficiency of BOLED doped BCzVBi in EML and HTL/ETL improved from 10090 cd/m2 at 9.5V and 6.44 cd/A at 4.0V to 13190 cd/m2 at 9.5V and 7.64 cd/A at 4.0V about 30% and 18%, respectively, with CIE coordinates of (0.14, 0.17) comparing to BOLED doped BCzVBi in EML only

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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