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High Density Plasma Silicon Carbide as a Barrier/Etch Stop Film for Copper Damascene Interconnects

Published online by Cambridge University Press:  17 March 2011

Hichem M'Saad
Affiliation:
Applied Materials, Inc. Dielectric Systems and Modules Santa Clara, CA 95054
Seon-Mee Cho
Affiliation:
Applied Materials, Inc. Dielectric Systems and Modules Santa Clara, CA 95054
Manoj Vellaikal
Affiliation:
Applied Materials, Inc. Dielectric Systems and Modules Santa Clara, CA 95054
Zhuang Li
Affiliation:
Applied Materials, Inc. Dielectric Systems and Modules Santa Clara, CA 95054
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Abstract

A low κ dielectric barrier/etch stop has been developed for use in copper damascene application. The film is deposited using methane, silane and argon as precursors in a HDP-CVD reactor. The film has a dielectric constant of 4.2 which is lower than the dielectric constant of conventional SiC or plasma silicon nitride (>7). Film characterization including physical, electrical, adhesion to ILD films, etch selectivity, and copper diffusion barrier properties show that this film is a better barrier than silicon nitride for low κ copper damascene interconnects. This film consists of a refractive index in the range of 1.7 to 1.8, a compressive stress of 1.0-1.5×109 dynes/cm2, and a leakage current of 5.0×10−10 A/cm2 at 1 MV/cm. When integrated in-situ with HDP-FSG, an effective dielectric constant of 3.5 can be achieved.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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