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High Density Plasma Etching of Ta2O5-Selectivity to Si and Effect of UV Light Enhancement

Published online by Cambridge University Press:  10 February 2011

K.P Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
H. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C. Hobbs
Affiliation:
APDRL, Motorola, Austin, TX 78721
P. Tobin
Affiliation:
APDRL, Motorola, Austin, TX 78721
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Abstract

Etch rates up to 1200 Åmin−1 for Ta2O5 were achieved in both SF6/Ar and Cl2/Ar discharges under Inductively Coupled Plasma conditions. The etch rates with N2/Ar or CH4/H2/Ar chemistries were an order of magnitude lower. There was no effect of post deposition annealing on the Ta2O5 etch rates, at least up to 800 °C. Selectivities to Si of ∼1 were achieved at low source powers, but at higher powers the Si typically etched 4-7 times faster than Ta 20 5. UV illumination during ICP etching in both SF6/Ar and Cl2/Ar produced significant enhancements (up to a factor of 2) in etch rates due to photo-assisted desorption of the TaFx products. The UV illumination is an alternative to employing elevated sample temperatures during etching to increase the volatility of the etch products and may find application where the thermal budget should be minimized during processing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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