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High Current Gain Triple Ion Implanted 4H-SiC BJT
Published online by Cambridge University Press: 31 January 2011
Abstract
We investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.
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- Research Article
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- Copyright © Materials Research Society 2010
References
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