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HF-last cleanings : a study of the properties with respect to the different variables

Published online by Cambridge University Press:  21 February 2011

S. Verhaverbeke ,
H. Bender ,
M. Meuris ,
P.P. Mertens ,
H.H. Schmidt  and
M.M. Heyns
S. Verhaverbeke
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Meuris
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
P.P. Mertens
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H.H. Schmidt
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M.M. Heyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The SiO2 etching by HF solutions is studied. A new model for this etching mechanism is developed based on the existence of the dimer of HF, namely H2F2.

Then the hydrogen passivation of the Si surface is investigated. The hydrogen passivation study is found to depend on the etching mechanism. Two extremes are investigated. The buffered HF solution and the concentrated HF solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 457
Copyright
Copyright © Materials Research Society 1993

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References

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