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Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM

Published online by Cambridge University Press:  22 February 2011

Hyung Mun Kim
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Sang-Gi Kim
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Sahn Nahm
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Hyung-Ho Park
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Hae-Kwon Lee
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Jae-Jin Lee
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Kyung-Ik Cho
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Heung Ro Choo
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Hong Man Kim
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Hyung Moo Park
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
Sin-Chong Park
Affiliation:
Semiconductor Technology Division, Electronics and Telecommunications Research InstitutePO. Box 8, Daeduck Science Town, Daejeon, 305–606, Korea
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Abstract

Heterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the <110> directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

[1] Swaminathan, V. and Macrander, A.T., Materials Aspects of GaAs and InP Baseed Structures (Prentice Hall, Englewood Cliffs, New Jersey, 1991).Google Scholar
[2] Wie, C.R., Kim, H.M., and Lau, K.M., SPIE Proc. 877, 41 (1988)CrossRefGoogle Scholar
[3] Wie, C.R., J Appl. Phys. 65, 2267 (1989)CrossRefGoogle Scholar

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Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM
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Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM
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Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM
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