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Heterogeneous Integration of LSI Amplifier and the Tactile Sensor Using Stacking and Through-Si-Via Techniques

Published online by Cambridge University Press:  15 June 2012

Masayuki Sohgawa
Affiliation:
Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan.
Hokuto Yokoyama
Affiliation:
Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan.
Takeshi Kanashima
Affiliation:
Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan.
Masanori Okuyama
Affiliation:
Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan.
Haruo Noma
Affiliation:
Advanced Telecommunications Research Institute International, 2-2-2 Hikaridai, Seika, Soraku, Kyoto 619-0288, Japan.
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Abstract

We have developed the tactile sensor using the microcantilevers with strain gauge film which can detect normal and shear forces simultaneously. In this work, the tactile sensor and the IC amplifier have been integrated heterogeneously to shorten the wire length by chip-on-chip stacking and reduce the noise in the output voltage. Standard deviation of the noise can be reduced from 27.6 mV to 3.3 mV by heterogeneous integration of the tactile sensor and the IC amplifier using Au wire bonding. By this heterogeneous integration, the device size and wiring numbers can be reduced, and installation of more sensors is allowed on fingertips of the robot. Moreover, through-silicon-via (TSV) holes were fabricated to mount an IC amplifier on the backside of the sensor chip, instead of using Au wires. Although TSV can be fabricated successfully, resistance to sacrificial etching process is problem. As a result, Si3N4 used instead of SiO2 has improved insulation between TSVs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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