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Heteroepitaxy of GaAs on Si by MOCVD

Published online by Cambridge University Press:  28 February 2011

Tetsuo Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
Toru Imori*
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
Masayoshi Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
*
*Present address: Central Research Laboratories, Nippon Mining Company, LTD, 17–35, Niizo-Minami, 3-Chome, Toda-shi, Saitama 335
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Abstract

The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

[1] Umeno, M. and Soga, T., Oyo Buturi 55 791 (1986) (in Japanese).Google Scholar
[2] Akiyama, M., Kawarada, Y. and Kaminishi, K., Jpn. J. Appl. Phys. 23 L843 (1984).CrossRefGoogle Scholar
[3] Soga, T., Hattori, S., Sakai, S., Takeyasu, M. and Umeno, M., Electron. Lett. 20 916 (1984) .CrossRefGoogle Scholar
[4] Soga, T., Hattori, S., Sakai, S. and Umeno, M., J. Cryst. Growth 77 498(1986).CrossRefGoogle Scholar
[5] Soga, T., Sakai, S., Takeyasu, M., Umeno, M. and Hattori, S., Inst. Phys. Conf. Ser. 79 133 (1986) .Google Scholar
[6] Sakai, S., Soga, T. and Umeno, M., Jpn. J. Appl. Phys. 25 1680 (1986).CrossRefGoogle Scholar

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