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Heteroepitaxial Growth and Phase Transition Properties of Vanadium Dioxide Thin Films on Different Orientations of Sapphire Substrates

Published online by Cambridge University Press:  21 March 2011

Z.P. Wu
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P.R.Chima
H. Naramoto
Affiliation:
Japan Atomic Energy Research Institute Watanuki 1233, Takasaki, Gunma 370-1292, Japan
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Abstract

Vanadium dioxide thin films have been deposited on sapphire substrates with different orientations by pulsed laser ablation. The samples are analyzed by x-ray diffraction and pole figures to determine epitaxial relationship. The crystal quality is evaluated by RBS/Channeling techniques. The results has shown that the growth of VO2 is of strong substrate dependence, the film on (0001) sapphire substrate exhibits better crystal quality than that on (1120) and (0112) sapphire substrates. The epitaxy can be divided into two processes, the first is surface symmetry determined oriented growth, and the second is in-plane oriented growth dominated by the minimization of in-plane lattice mismatch. More over, different substrates result in different defect microstructures, 120o twin is observed in VO2 film on (0001) substrate while 180o on (1120) and no twin on (0112), which also reflects the surface symmetries of the substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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Heteroepitaxial Growth and Phase Transition Properties of Vanadium Dioxide Thin Films on Different Orientations of Sapphire Substrates
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