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Hall Effect Measurements on New Thermoelectric Materials

Published online by Cambridge University Press:  01 February 2011

Jarrod Short
Affiliation:
Electrical and Computer Engineering Department, Michigan State University 2120 Engineering Building, East Lansing, MI 48824–1226
Sim Loo
Affiliation:
Electrical and Computer Engineering Department, Michigan State University 2120 Engineering Building, East Lansing, MI 48824–1226
Sangeeta Lal
Affiliation:
Electrical and Computer Engineering Department, Michigan State University 2120 Engineering Building, East Lansing, MI 48824–1226
Kuei Fang Hsu
Affiliation:
Chemistry Department, Michigan State University East Lansing, MI 48824–1322
Eric Quarez
Affiliation:
Chemistry Department, Michigan State University East Lansing, MI 48824–1322
Mercouri G. Kanatzidis
Affiliation:
Chemistry Department, Michigan State University East Lansing, MI 48824–1322
Timothy P. Hogan
Affiliation:
Electrical and Computer Engineering Department, Michigan State University 2120 Engineering Building, East Lansing, MI 48824–1226
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Abstract

In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass.

To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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