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Growth of Strain-Free GaAs on Si/Sapphire

Published online by Cambridge University Press:  15 February 2011

Hyunchul Sohn ,
E.R. Weber ,
Jay Tu  and
J.S. Smith
Hyunchul Sohn
Affiliation:
Department of Materials Science and Mineral Engineering, University of California
E.R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California
Jay Tu
Affiliation:
Department of Electric Engineering and Computer Science, University of California, Berkeley.
J.S. Smith
Affiliation:
Department of Electric Engineering and Computer Science, University of California, Berkeley.
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Abstract

GaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy(MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si.

As an effort to achieve further reduction in the residual strain, Indium- doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit strain in the GaAs layer. Using this method, strain- free GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 423
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Yamaguchi, M., Nishioka, T., and Sugo, M., Appl. Phys. Lett. 54, 24 (1989)Google Scholar
2 Liliental-Weber, Z., Weber, E.R., Washburn, J., Liu, T.Y., and Kroemer, H., MRS Symp. Proc. Vol. 91, 91 (1982)Google Scholar
3 Lee, Henry P., Liu, Xiaoming, Lin, Hong, Smith, John S., and Wang, Shyh, Appl.Phys.Lett. 53, 2394 (1988)Google Scholar
4 Sohn, Hyunchul, Weber, E. R., Tu, Jay, Lee, Henry, and Wang, Shyh, MRS Symp. Proc. Vol. 198, 45 (1990)Google Scholar
5 Sohn, Hyunchul, Weber, E. R., Tu, Jay, and Wang, Shyh, MRS Symp. Proc. Vol. 202, 609 (1991)Google Scholar
6 Humphreys, T.P., Miner, C.J., Posthill, J.B., Das, K., Summerville, M.K., Nemanich, R.J., Sukow, C.A. and Parikh, N.R., Appl. Phys. Lett. 54, 1687 (1989)Google Scholar