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Growth of InGaN Nanorods as the Blue Light Source for White Light Emitting Devices

Published online by Cambridge University Press:  01 February 2011

Hwa-Mok Kim
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100–715, Korea
Tae Won Kang
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100–715, Korea
Kwan Soo Chung
Affiliation:
School of Electronics and Information, College of Electronics and Information Kyunghee University Yongin, 449–701, Korea
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Abstract

This work demonstrates the properties of InGaN nanorod arrays with various In mole fractions by modified HVPE using In metal at the low growth temperature. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c-axis direction. We found that the In mole fractions in the nanorods were linearly increased at x ≤ 0.1. However, In mole fractions were slightly increased at x > 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong blue emissions from 428 nm (x = 0.1, 2.89 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature. From this result, we found the fact that increasing In mole fraction in the InGaN nanorod shift the peak position of CL spectrum emitted from InGaN nanorod to the low energy region.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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