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The Growth Of High-Quality MCT Films by MBE Using in Situ Ellipsometry

Published online by Cambridge University Press:  15 February 2011

K.K. Svitashev
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
S.A. Dvorwetsky
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
V.A. Shvets
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
A.S. Mardezhov
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
YU.G. Sidoroy
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
I.E. Nis
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
V.S. Varavin
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
V. Liberman
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
V. G. Remesnik
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of Academy of Sciences, Novosibirsk, Russia
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Abstract

The ellipsometry and RHEED study of MCT grown on (112) CdTe and GaAs by MBE was carried out. The dependence of ellipsometric parameter on composition is evaluated. As shown we can measure the growth rate, the roughness changing, initial temperature and composition by ellipsometry in situ. We investigated the evolution of roughness of film surface. We observed the appearance of surface roughness at initial stage of MCT growth under various composition (XcdTe0÷0.4). The following growth in optimal growth condition (including constancy of substrate temperature) gives us the smoothing of the surface and supplies us the high-quality MCT films. It is found that under constant temperature of substrate heater we can not grow the thick, perfect film of MCT. The concentration, mobility and life time of carriers in MCT films were respectively: n=1.8*1014 ÷8.2*1015cm−3, μn=44000÷370000cm2 V−1 s−1, τ=40÷220ns;p=1.8*1015÷8.4*1015 cm−3, μp=215÷284 cm2V−1 s−1 τ=12÷20ns.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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