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Growth of GaN Nanorods on (0001) Sapphire Substrates by Hydride Vapor Phase Epitaxy
Published online by Cambridge University Press: 01 February 2011
Abstract
GaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100×1012 rods/m2.
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- Copyright © Materials Research Society 2002