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Growth of GaN Nanorods on (0001) Sapphire Substrates by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Hwa-Mok Kim
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Doo Soo Kim
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Young Wook Chang
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Deuk Young Kim
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Tae Won Kang
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
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Abstract

GaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100×1012 rods/m2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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