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Growth of GaAs / Ca0.5Sr0 5F2 / (100) GaAs by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

S. Horng
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Y. Hirose
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
A. Kahn
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
C. Wrenn
Affiliation:
Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
R. Pfeffer
Affiliation:
Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
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Abstract

Alternate layers of GaAs and Ca0.5Sr0.5F2 are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and sequence. The fluoride layers show a high degree of crystallinity and a smooth surface morphology. The structural and morphological quality of the GaAs overlayer is improved by electron irradiation of the fluoride surface prior to GaAs growth, and by a two-step growth procedure for the GaAs over-growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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