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Growth of Fe/ZnSe Multilayers on GaAs (001) AND (111) by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

H. Abad
Affiliation:
National Research Council Postdoctoral Associate
B. T. Jonker
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375-5343.
C. M. Cotell
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375-5343.
S. B. Qadri
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375-5343.
J. J. Krebs
Affiliation:
Naval Research Laboratory, Washington, D. C., 20375-5343.
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Abstract

The growth of Fe/ZnSe/Fe multilayers on (001) and (111) GaAs substrates is reported. The samples were characterized in-situ by reflection high energy electron diffraction (RHEED), and ex situ by vibrating sample magnetometry (VSM), ferromagnetic resonance (FMR), cross sectional transmission electron microscopy (TEM), and x-ray diffraction. On the (001) surface, the quality of the layers deteriorated significantly with the growth of the first ZnSe spacer layer. In Fe/ZnSe/Fe trilayer structures, TEM revealed a well-defined layered structure, with a high density of defects in both the ZnSe spacer layer and the subsequent Fe layer. VSM and FMR clearly showed the presence of two Fe films with distinct coercive fields, with the higher coercive field attributed to the lower crystalline quality of the second Fe layer. θ-2θ xray diffraction measurements performed on samples grown on (001) GaAs substrates indicated that the ZnSe spacer layer (grown on (001) Fe) grew in a (111) orientation. Growth on GaAs(111) substrates produced better RHEED patterns for all layers with little deterioration in film quality with continued layer growth, so that the magnetic properties of the individual Fe layer could not be distinguished.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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Growth of Fe/ZnSe Multilayers on GaAs (001) AND (111) by Molecular Beam Epitaxy
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