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Growth, Characterization, and Application of High Al-content AlGaN and High Power III-Nitride Ultraviolet Emitters

Published online by Cambridge University Press:  01 February 2011

Z. Ren
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
S.-R. Jeon
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
M. Gherasimova
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
G. Cui
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
J. Han
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
H. Peng
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912, USA
Y. K. Song
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912, USA
A. V. Nurmikko
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912, USA
L. Zhou
Affiliation:
Lumileds Lighting, LLC, San Jose, CA 95131, USA
W. Goetz
Affiliation:
Lumileds Lighting, LLC, San Jose, CA 95131, USA
M. Krames
Affiliation:
Lumileds Lighting, LLC, San Jose, CA 95131, USA
H.-K. Cho
Affiliation:
Materials Science and Engineering, Dong-A University, Saha-gu, Busan 604–714, Korea
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Abstract

A study of Si-doped and Mg-doped AlxGa1-xN up to × ∼ 50 % and the characteristics of ultraviolet (UV) light emitting diodes (LEDs) with emission wavelengths at 340 nm and 290 nm are reported. By using grading super-lattices (SLs) before n-type AlGaN growth, surface roughness is much improved. Resistivity of 2.9×10-2 Ωcm and free electron concentrations of 2.9×10 cm- are achieved for n-type Al0.45Ga0.55N. The viability of effective p-type doping is defined by a minimum concentration of Mg required to offset the background impurities and, more importantly, a maximum limit above which inversion domains and structural defects start to nucleate, accompanied by a rapid degradation of electrical transport. Resistivity of 10 Ωcm and free hole concentrations above 1017 cm−3 are achieved for AlxGa1-xN up to × ∼ 50 % within an optimum window of Mg incorporation. Output powers up to 1.5 mW from small area 340 nm LEDs (< 100 μm diameter) and 110 μW from 290 nm LEDs (100 μm diameter) directly off a planar chip have been achieved under DC condition. For large area encapsulated lamp (1×1 mm2 device area and 0.52 mm2 mesa area), output power of 79 mW from 340 nm LEDs and 8.5 mW from 290 nm LEDs are achieved under pulse mode (1kHz, 2% duty factor).

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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Growth, Characterization, and Application of High Al-content AlGaN and High Power III-Nitride Ultraviolet Emitters
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Growth, Characterization, and Application of High Al-content AlGaN and High Power III-Nitride Ultraviolet Emitters
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