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Growth and Structure of Al/MgO Interfaces

Published online by Cambridge University Press:  15 February 2011

T. Wagner  and
M. Ruhle
T. Wagner
Affiliation:
Max-Planck-lnstitut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
M. Ruhle
Affiliation:
Max-Planck-lnstitut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
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Abstract

The A1/MgO system has been used as a model system to study growth processes and structure at metal/ceramic interfaces. Aluminum films were grown on air-cleaved MgO (100) substrates in ultra high vacuum (UHV) by molecular beam epitaxy (MBE). The substrates and films were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), conventional transmission electron microscopy (CTEM), and high resolution transmission electron microscopy (HREM). XRD measurements exhibited a pronounced {100} texture. Employing electron diffraction in the TEM on cross sectional samples, we observed the following orientation relationship between Al and MgO: (100)A1 II (100)MgO; [010]A1 II [010]MgO. The atomistic structure of the interface was investigated by HREM. Regions of structural defects can be identified clearly at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 41
Copyright
Copyright © Materials Research Society 1995

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References

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