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Growth and Structural Studies of Thin Films in the Mo-Bi-O System

Published online by Cambridge University Press:  15 February 2011

L. E. Depero
Affiliation:
Istituto Nazionale di Fisica per la Materia and Dipartimento di Chimica e Fisica per i Materiali, Università di Brescia, Via Branze, 38 - 25123 Brescia, Italy
L. Sangaletti
Affiliation:
Istituto Nazionale di Fisica per la Materia and Dipartimento di Chimica e Fisica per i Materiali, Università di Brescia, Via Branze, 38 - 25123 Brescia, Italy
M. Zocchi
Affiliation:
Istituto Nazionale di Fisica per la Materia and Dipartimento di Chimica e Fisica per i Materiali, Università di Brescia, Via Branze, 38 - 25123 Brescia, Italy
G. A. Rizzi
Affiliation:
Dipartimento di Chimica Inorganica, Metallorganica e Analitica, Università di Padova, Via F. Marzolo, 1 - 35131 Padova, Italy
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Abstract

In the present contribution an X-ray diffraction (XRD) study of thin films in the Mo-Bi-O system is reported. The samples were grown by MOCVD on A12O3 substrates. Several thin films have been grown starting from a Mo:Bi ratio in the two metallorganic precursors ranging from 6:1 to 1:1, thus obtaining films constituted by MoO3 and Mo-Bi-O layers with different thicknesses. The effect of the underlying Mo-Bi-O layer on the preferred orientation of the MoO3 layer, which is found in the samples with a high Mo:Bi ratio in the precursors, is discussed. Moreover, an equation is proposed relating the percentage of the phase constituting the film, as given by the Rietveld leastsquares procedure, and the film thickness. Thus it is shown that the growth rate of the pure MoO3 film is much higher than that of the Mo-Bi-O oxide film. A tentative explanation can be given by considering a possible growth inhibiting action by Bi in this system.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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