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Growth and low temperature photoluminescence of silicon nanowires for different catalysts

Published online by Cambridge University Press:  31 January 2011

Olivier Demichel
Affiliation:
olivier.demichel@cea.frolivier.demichel@gmail.com, CEA/INAC, SP2M, Grenoble, France
Fabrice Oehler
Affiliation:
fabrice.oehler@cea.fr, CEA/INAC, SP2M, Grenoble, France
Vincent Calvo
Affiliation:
vincent.calvo@cea.fr, CEA/INAC, SP2M, Grenoble, France
Pierre Noé
Affiliation:
pierre.noe@cea.fr, CEA/INAC, SP2M, Grenoble, France
Adrien Besson
Affiliation:
adrien.besson@cea.fr, CEA/INAC, SP2M, Grenoble, France
Nicolas Pauc
Affiliation:
nicolas.pauc@cea.fr, CEA/INAC, SP2M, Grenoble, France
Pascal Gentile
Affiliation:
pascal.gentile@cea.fr, CEA/INAC, SP2M, Grenoble, France
Thierry Baron
Affiliation:
thierry.baron@cea.fr, CNRS-LTM, Grenoble, France
Noël Magnea
Affiliation:
noel.magnea@cea.fr, CEA/INAC, SP2M, Grenoble, France
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Abstract

We report the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with several catalysts. We performed low temperature photoluminescence (PL) experiments on as-grown SiNWs for the following catalysts: Au, Cu, TiSi, PdSi and PtSi. Nanowires are chemically treated with an aqua regia solution to remove the catalyst droplets, this step is followed by a thermal oxidation process. We compared the PL of as-grown and processed SiNWs for each catalyst.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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