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Growth and Electrical Properties of Fe doped (Ba,Sr)TiO3 Thin Films Deposited by Pulsed Laser Deposition

Published online by Cambridge University Press:  17 March 2011

Yoshiyuki Yonezawa
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Megumi Kato
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Yoshinori Konishi
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Shizuyasu Yoshida
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Nobuhiro Okuda
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Takahiko Maeda
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Ryohei Tanuma
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Michio Ohsawa
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Hideaki Matsuyama
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Shinji Ogino
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Naoto Fujishima
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Akinori Matsuda
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Noboru Furusyo
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, Japan
Toyohiro Chikyow
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba, Japan
Masashi Kawasaki
Affiliation:
Institute for Materials Research, Tohoku University, Sendai, Japan
Hideomi Koinuma
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan
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Abstract

Impurity effects were investigated in (Ba,Sr)TiO3 (BST) systems in order to suppress leakage currents under relatively low oxygen pressure conditions by Pulsed Laser Deposition (PLD). We tried to dope transition metals, such as Mo, Mn, Cr, W and Fe into the BST target and used the targets to fabricate the films. By measuring electrical properties, we found Fe-doping had a significant effect on suppressing leakage current. Subsequently, we changed the amount of Fe doping from 0.1mol% to 6%. As a result, with post annealing, the sample with Fe:4% showed the lowest leakage current among those analyzed. Even without post annealing, the sample with Fe:6% showed the lowest leakage current. As for the dielectric constants, they decreased as the doping increased. At most, a 30% reduction was observed, compared with non-doped BST. XANES (X-ray Absorption Near Edge Structures) results indicated that the valency of the Fe ion was 3+ and located at the B-site of BST.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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Growth and Electrical Properties of Fe doped (Ba,Sr)TiO3 Thin Films Deposited by Pulsed Laser Deposition
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