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Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

Published online by Cambridge University Press:  10 February 2011

H. C. Kuo ,
S. Thomas ,
A. P. Curtis ,
G. E. Stillman ,
C. H. Lin  and
H. Chen
H. C. Kuo
Affiliation:
Dept. of Electrical and Computer Engineering, Microelectronics Laboratory. University of Illinois at Urbana Champaign, Urbana, IL 61801, U. S. A.h-kuol @students.uiuc.edu
S. Thomas
Affiliation:
Dept. of Electrical and Computer Engineering, Microelectronics Laboratory. University of Illinois at Urbana Champaign, Urbana, IL 61801, U. S. A.h-kuol @students.uiuc.edu
A. P. Curtis
Affiliation:
Dept. of Electrical and Computer Engineering, Microelectronics Laboratory. University of Illinois at Urbana Champaign, Urbana, IL 61801, U. S. A.h-kuol @students.uiuc.edu
G. E. Stillman
Affiliation:
Dept. of Electrical and Computer Engineering, Microelectronics Laboratory. University of Illinois at Urbana Champaign, Urbana, IL 61801, U. S. A.h-kuol @students.uiuc.edu
C. H. Lin
Affiliation:
Dept. of Material Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U. S. A.
H. Chen
Affiliation:
Dept. of Material Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U. S. A.
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Abstract

InAsxPi.x/InP (10 period 50/100Å with x=0.25–0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional transmission electron microscope (XTEM), double crystal x-ray diffraction (DCXRD), and optical spectroscopy. The structural analysis demonstrates that excellent control of the sharp interface and limited As-P interdiffusion can be achieved by GSMBE growth. XTEM images of these SMQWs display no misfit dislocations, and DCXRD scans reveal high order superlattice satellite peaks. Photoluminescence (PL) and transmission measurements were performed for all SMQWs to evaluate crystal quality. Only slight degradation in luminescence was observed as the As composition increased. Based on the three-band Kane model which includes the lattice strain, the transition energies of SMQWs were calculated using the conduction-band offset (Qc=δEc/δEg) as an adjustable parameter. The best fit of measured and calculated interband transition energies suggests that Qc is independent of As composition and is 0.70±0.05. Finally, a growth kinetics model based on the Langmuir equation was derived to realize the As/P incorporation ratio in the InAsP materials. Theoretical results show good agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 153
Copyright
Copyright © Materials Research Society 1997

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