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Growth and Characterization of High-Performance GaN and Al x Ga1−x N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates

Published online by Cambridge University Press:  01 February 2011

Russell D. Dupuis
Affiliation:
dupuis@gatech.edu, Georgia Institute of Techlogy, School of Electrical and Computer Engineering, 777 Atlantic Drive NW, Atlanta, GA, 30332-0250, United States, 404-385-6094, 404-385-6096
Dongwon Yoo
Affiliation:
dyoo@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr. NW, Atlanta, GA, 30332-0250, United States
Jae-Hyun Ryou
Affiliation:
jaehyun.ryou@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr. NW, Atlanta, GA, 30332-0250, United States
Yun Zhang
Affiliation:
yzhang34@mail.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr. NW, Atlanta, GA, 30332-0250, United States
Shyh-Chinag Shen
Affiliation:
shensc@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr. NW, Atlanta, GA, 30332-0250, United States
Jae Limb
Affiliation:
jaelimb@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr. NW, Atlanta, GA, 30332-0250, United States
Paul D. Yoder
Affiliation:
doug.yoder@gtsav.gatech.edu, Georgia Institute of Technology, Savannah, School of Electrical and Computer Engineering, 210 Technology Circle, Savannah, GA, 31407, United States
A. Drew Hanser
Affiliation:
hanser@kymatech.com, Kyma Technologies, 8829 Midway West Road, Raleigh, NC, 27617, United States
Edward Preble
Affiliation:
preble@kymatech.com, Kyma Technologies, 8829 Midway West Road, Raleigh, NC, 27617, United States
Keith Evans
Affiliation:
evans@kymatech.com, Kyma Technologies, 8829 Midway West Road, Raleigh, NC, 27617, United States
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Abstract

Wide-bandgap III-nitride-based avalanche photodiodes (APDs) are important for photodetectors operating in UV spectral region. For the growth of GaN-based heteroepitaxial layers on lattice-mismatched substrates such as sapphire and SiC, a high density of defects is introduced, thereby causing device failure by premature microplasma breakdown before the electric field reaches the level of the bulk avalanche breakdown field, which has hampered the development of III-nitride based APDs. In this study, we investigate the growth and characterization of GaN and AlGaN-based APDs on free-standing bulk GaN substrates. Epitaxial layers of GaN and Al x Ga1−x N p-i-n ultraviolet avalanche photodiodes were grown by metalorganic chemical vapor deposition (MOCVD). Improved crystalline and structural quality of epitaxial layers was achieved by employing optimum growth parameters on low-dislocation-density bulk substrates in order to minimize the defect density in epitaxially grown materials. GaN and AlGaN APDs were fabricated into 30μm- and 50μm-diameter circular mesas and the electrical and optoelectronic characteristics were measured. APD epitaxial structure and device design, material growth optimization, material characterizations, device fabrication, and device performance characteristics are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

1. Dupuis, R. D. and Campbell, J. C., "Chapter 9. Ultraviolet photodetectors based upon III-N materials", Wide Energy Bandgap Electronic Devices, ed. Ren, F. and Zolper, J. C. (World Scientific Publishing, Singapore, 2003) pp.430433.Google Scholar
2. Carrano, J. C., Li, T., Grudowski, P. A., Dupuis, R. D., and Campbell, J. C., IEEE Circuits and Devices 15 (5), 15 (1999).CrossRefGoogle Scholar
3. McIntosh, K. A., Molnar, R. J., Mahoney, L. J., Lightfoot, A., Geis, M. W., Molvar, K. M., Melngailis, I., Aggarwal, R. L., Goodhue, W. D., Choi, S. S., Spears, D. L., and Verghese, S., Appl. Phys. Lett. 75, 3485 (1999).10.1063/1.125363CrossRefGoogle Scholar
4. Verghese, S., McIntosh, K. A., Molnar, R. J., Mahoney, L. J., Aggarwal, R. L., Geis, M. W., Molvar, K. M., Duerr, E. K., and Melngailis, I., IEEE Trans. Electron. Devices 48, 502 (2001).CrossRefGoogle Scholar
5. Shen, S.-C., Zhang, Y., Yoo, D., Limb, J.-B., Ryou, J.-H., Yoder, P. D., and Dupuis, R. D., IEEE Photon. Tech. Lett. 19, 1744 (2007).CrossRefGoogle Scholar

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Growth and Characterization of High-Performance GaN and Al x Ga1−x N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates
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Growth and Characterization of High-Performance GaN and Al x Ga1−x N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates
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