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Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy

Published online by Cambridge University Press:  01 February 2011

Akira Honshio
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Tsukasa Kitano
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Masataka Imura
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Yasuto Miyake
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Hideki Kasugai
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Kazuyoshi Iida
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Takeshi Kawashima
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Motoaki Iwaya
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Satoshi Kamiyama
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Hiroshi Amano
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Isamu Akasaki
Affiliation:
Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Hiroyuki Kinoshita
Affiliation:
SiXON Ltd., 47 Umezutakase-cho, Ukyo-ku, Kyoto 615–8686, Japan.
Hiromu Shiomi
Affiliation:
SiXON Ltd., 47 Umezutakase-cho, Ukyo-ku, Kyoto 615–8686, Japan.
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Abstract

The heteroepitaxial growth of a GaN single crystal by metal-organic vapor phase epitaxy on a 4H-SiC (3038) substrate was demonstrated. The crystallographic orientation of GaN was found to be dependent on growth pressure. When the growth pressure was 1000 hPa, the orientation of the GaN single crystal was consistent with that of the SiC substrate, where the c-plane of the GaN was single crystal tilted 54.7° from the surface plane. Then, we fabricated a violet-light-emitting diode (LED) with a GaInN multiple-quantum-well (QW) active layer grown on the GaN layer, which coherently grew on the 4H-SiC (3038 ) substrate. The blue shift of the peak wavelength with increasing injection current of up to 100 mA was confirmed to be two times smaller than that of a conventional LED on a c-plane sapphire substrate due to a low internal polarization.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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