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Grain Enlargment in Polysilicon on Insulating Substrates Induced by Q-Switched Nd:Yag Laser Irradiation

Published online by Cambridge University Press:  15 February 2011

R. J. Falster
Affiliation:
Quantronix Corp., Smithtown, NY 11788USA
G. E. J. Eggermont
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corp. Sunnyvale, CA 94086USA
J. F. Gibbons
Affiliation:
Quantronix Corp., Smithtown, NY 11788USA
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Abstract

A systematic investigation of the formation of large grained rings in polysilicon by Q-switched laser irradiation has been performed. Parameters varied in this study were polysilicon thickness, substrate temperature and underlying oxide thickness. Increasing ring widths were obtained for increasing substrate temperature, polysilicon film thickness and underlying oxide thickness. The width of these rings was found to be independent of incident laser power above a certain threshold value. Surface morphology and the occurrence of cracking and ablation in these films as a function of these parameters was also investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

1. Schott, J. T. and Comer, J. J. in Laser and Electron Beam Solid Interactions and Materials Processing, Gibbons, J. F., Hess, L. D. and Sigmon, T. W., eds. (North Holland, New York 1981) pp. 479486.Google Scholar
2. Celler, G. K., Leamy, H. J., Aspnes, D. E., Doherty, C. J., Sheng, T. T. and Trimble, L. E., ibid., pp. 435–442.Google Scholar
3. Shibata, T., Lee, K. F., Gibbons, J. F., Magee, T. J., Peng, J. and Hong, J. D., J. Appl. Phys. 52, 3625 (1981).CrossRefGoogle Scholar
4. Celler, G. K., Leamy, H. J., Trimble, L. E. and Sheng, T. T., Appl. Phys.Lett. 39, 425 (1981).CrossRefGoogle Scholar

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Grain Enlargment in Polysilicon on Insulating Substrates Induced by Q-Switched Nd:Yag Laser Irradiation
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Grain Enlargment in Polysilicon on Insulating Substrates Induced by Q-Switched Nd:Yag Laser Irradiation
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