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Grain Boundary Diffusion in NiFe/Ag Bilayer Thin Films

Published online by Cambridge University Press:  15 February 2011

M. Gall
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78712-1100
J.G. Pellerin
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78712-1100
P.S. Ho
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78712-1100
K.R. Coffey
Affiliation:
IBM Storage Systems Division, 5600 Cottle Rd, 808/282, San Jose, CA 95193
J.K. Howard
Affiliation:
IBM Storage Systems Division, 5600 Cottle Rd, 808/282, San Jose, CA 95193
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Abstract

X-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Ag through 250 Å thick Ni80Fe20 (permalloy) films in the temperature range of 375 to 475°C. Grain boundary diffusivities were determined by modeling the accumulation of Ag on Ni80Fe20 surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Ag through Ni80Fe20 is characterized by a diffusion coefficient prefactor, D0,gb, of 0.9 cm2/sec and an activation energy, Ea,gb, of 2.2 eV. The Ni80Fe20 film microstructure has been investigated before and after annealing by atomic force microscopy and x-ray diffraction. The microstructure of Ni80Fe20 deposited on Ag underlayers remained relatively unchanged upon annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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